WebNov 29, 2024 · Solid-solid grain boundaries—two-dimensional (2D) defects at the intersection of regions of a polycrystalline material having different orientations—are of fundamental importance in determining the bulk physical properties of crystalline solids, including ductility, strength, conductivity, and optical response (1–3).Hence, they have … WebEpitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is …

Pleomorphism and multidirectional combination of Si …

WebJan 1, 2015 · Recrystallization of amorphous silicon is studied by classical molecular dynamics. First, a simulation scheme is developed to systematically determine the amorphous on crystal (a/c) silicon motion and compare it to established measurements by Olson and Roth [].As a result, it is shown that MD simulations using Tersoff [] potential … WebJul 1, 2014 · Crystallization in the absence of a seed implies both grain nucleation and growth. Dopants also play a relevant role in the crystallization process. It emerged that … dfhmsd in cics

Transient crystal grain nucleation in As doped amorphous …

Web2 days ago · For the elastic deformation (h < 0.5 nm), the crystal to amorphous phase transition takes place below the indenter [43, 44], as shown in Figure 5, Figure 6 a,e. For the plastic deformation (h > 0.5 nm), the homogeneous nucleation of individual dislocations is observed in the single grain [ 27 ], and the dislocations begin to proliferate with ... WebJul 14, 2014 · The amorphous Si 1−x Ge x /Si bi-layer was sequentially deposited by using Si 3 H 8 and GeH 4 source gases in a low-pressure chemical vapor deposition (LPCVD) system on silicon dioxide on Si substrate at a deposition temperature 480 °C. The deposited Si and SiGe layers were 21 and 20–25 nm thick, respectively. The Ge … WebThe nucleation kinetics of the amorphous‐to‐crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500–580 °C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting … dfh network